Перегляд за автором "Moskalenko, N.L."

Сортувати за: Порядок: Результатів:

  • Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions 
    Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM ...
  • Is there any future of optical discs? 
    Kryuchyn, A.A.; Petrov, V.V.; Kostyukevych, S.O.; Kostyukevych, K.V.; Kudryavtsev, A.A.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Considered in this paper are causes for cutting compact discs out of information technology market. It has been shown a search of new technological solutions for efficient use of CDs in archive data storage.
  • Optical properties of ion implanted thin Ni films on lithium niobate 
    Lysiuk, V.O.; Staschuk, V.S.; Androsyuk, I.G.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Ion implantation by keV Ar⁺ ions creates blisters on the surface of thin Ni films deposited on lithium niobate and causes changes in optical properties and structure of Ni film and lithium niobate substrate. Processes of ...
  • Optical recording of information pits in thin layers of chalcogenide semiconductors 
    Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers 
    Rubish, V.M.; Gera, E.B.; Pop, M.M.; Maryan, V.M.; Kostyukevych, S.O.; Moskalenko, N.L.; Semak, D.G.; Kostyukevych, K.V.; Kryuchin, A.A.; Petrov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads ...
  • Study of non-reversible photostructural transformations in As₄₀S₆₀-xSex layers applied for fabrication of holographic protective elements 
    Stronski, A.V.; Vlcek, M.; Kostyukevych, S.A.; Tomchuk, V.M.; Kostyukevych, E.V.; Svechnikov, S.V.; Kudryavtsev, A.A.; Moskalenko, N.L.; Koptyukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes ...
  • The new approach to identification of film reflecting holographic marks 
    Kostyukevych, S.O.; Muravsky, L.I.; Fitio, V.M.; Voronyak, T.I.; Shepeliavyi, P.E.; Kostyukevych, K.V.; Moskalenko, N.L.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master ...
  • Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices 
    Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...