Перегляд за автором "Dzhumaev, B.R."

Сортувати за: Порядок: Результатів:

  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Effect of the desorption process on photoluminescence excitation spectra of porous silicon 
    Torchinskaya, T.V.; Korsunskaya, N.E.; Khomenkova, L.Yu.; Dzhumaev, B.R.; Many, A.; Goldstein, Y.; Savir, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Photoluminescence (PL), photoluminescence excitation (PLE) and FTIR methods were used to study the PL excitation mechanism in porous silicon (PS). Two types of PLE spectra were observed, consisting of two (visible and ...