Golenkov, A.G.; Zhuravlev, K.S.; Gumenjuk-Sichevska, J.V.; Lysiuk, I.O.; Sizov, F.F.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise ...