Перегляд за автором "Sokolov, V.N."

Сортувати за: Порядок: Результатів:

  • Effect of nonuniform doping profile on thermometric performance of diode temperature sensors 
    Sokolov, V.N.; Shwarts, Yu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused ...
  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Self-consistent method for optimization of parameters of diode temperature sensors 
    Kulish, N.R.; Shwarts, Yu.M.; Borblik, V.L.; Venger, Ye.F.; Sokolov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically ...
  • Theory of relaxation for spontaneous emission of Bloch oscillation radiation 
    Sokolov, V.N.; Iafrate, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A theory for the spontaneous emission (SE) of radiation for a Bloch electron traversing a single energy miniband of a superlattice (SL) in a cavity while undergoing scattering is presented. The Bloch electron is accelerated ...
  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...