Перегляд за автором "Nashchekina, O.N."

Сортувати за: Порядок: Результатів:

  • Structure of thermally evaporated bismuth selenide thin films 
    Rogacheva, E.I.; Fedorov, A.G.; Krivonogov, S.I.; Mateychenko, P.V.; Dobrotvorskay, M.V.; Garbuz, A.S.; Nashchekina, O.N.; Sipatov, A.Yu. (Functional Materials, 2018)
    The Bi₂Se₃ thin films with thicknesses d = 7-420 nm were grown by thermal evaporation in vacuum of stoichiometric n-Bi₂Se₃ crystals onto heated glass substrates under optimal technological conditions determined by the ...
  • Temperature and concentration dependences of specific heat of Bi₁-xSbx solid solutions 
    Rogacheva, E.I.; Doroshenko, A.N.; Nashchekina, O.N. (Functional Materials, 2018)
    For Bi₁-xSbx solid solutions, the concentration (x = 0 - 0.12) and temperature (170-525 K) dependences of specific heat Cp were obtained. At all temperatures studied, three peaks of Cp were observed near x = 0.015, x = ...
  • Temperature dependences of SnTe linear expansion coefficient 
    Rogacheva, E.I.; Popov, V.P.; Nashchekina, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained ...