Перегляд за автором "Kryuchin, A.A."

Сортувати за: Порядок: Результатів:

  • Analysis of methods for high-speed forming the relief microimages on metallic substrates 
    Kryuchin, A.A.; Pankratova, A.V.; Kassko, I.A.; Nagorny, F.V.; Chirkov, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The use of methods of ion and electrochemical etching of metallic substrates to obtain relief microstructures with micron and submicron sizes is considered. Presented are the results of experimental researches of processes ...
  • Luminescence of the pyrazoline dye in nanostructured zeolite matriх 
    Beliak, I.V.; Kravets, V.G.; Kryuchin, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    A physicotechnical fundamental of the multilayer photoluminescent media development has been considered. The quantum yield and relaxation time of luminescence were found as most significant values of the recording material. ...
  • Optical recording of information pits in thin layers of chalcogenide semiconductors 
    Morozovska, A.N.; Kostyukevych, S.A.; Nikitenko, L.L.; Kryuchin, A.A.; Kudryavtsev, A.A.; Shepeliavyi, P.E.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The paper is devoted to the theoretical consideration of the question how to record pits with the necessary height profile in photosensitive materials by varying their heat conductivity, photosensitivity, optical absorption, ...
  • Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers 
    Rubish, V.M.; Gera, E.B.; Pop, M.M.; Maryan, V.M.; Kostyukevych, S.O.; Moskalenko, N.L.; Semak, D.G.; Kostyukevych, K.V.; Kryuchin, A.A.; Petrov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads ...