Перегляд за автором "Kiselev, V.S."

Сортувати за: Порядок: Результатів:

  • Investigation of structural perfection of SiC ingots grown by a sublimation method 
    Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...
  • Study of postimplantation annealing of SiC 
    Avramenko, S.F.; Kiselev, V.S.; Romanyuk, B.N.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o ...
  • Synthesis, morphological and structural properties of bio-SiC ceramics 
    Yukhymchuk, V.O.; Kiselev, V.S.; Belyaev, A.E.; Chursanova, M.V.; Danailov, M.; Valakh, M.Ya. (Functional Materials, 2010)