Перегляд за автором "Dacenko, O.I."

Сортувати за: Порядок: Результатів:

  • Evidence for photochemical transformations in porous silicon 
    Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...
  • Post-anodic formation of luminescent porous silicon layers in atmospheric environment 
    Makara, V.A.; Vakulenko, O.V.; Shevchenko, V.B.; Dacenko, O.I. (Functional Materials, 2005)
    The changes occuring in HF pre-etched porous silicon (PS) samples during aging are studied by measurement of photoluminescence (PL) and IR transmission spectra. The PL behavior of the etched sample is found to depend on ...