Перегляд за автором "Anischik, V.M."

Сортувати за: Порядок: Результатів:

  • On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • Role of dislocations in formation of ohmic contacts to heavily doped n-Si 
    Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ...