Перегляд за автором "Lytvyn, P.M."

Сортувати за: Порядок: Результатів:

  • Mechanical scanning probe nanolithography: modeling and application 
    Lytvyn, P.M.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Grytsenko, K.P.; Schrader, S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper presents a study on modeling the mechanical interaction between the tip of a scanning atomic force microscope (AFM) and surfaces of various types, which makes it possible to optimize parameters and modes for ...
  • Microanalysis of magnetic structure of yttrium-iron garnet films by using the scanning probe microscopy methods 
    Synhaivska, O.I.; Lytvyn, P.M.; Yaremiy, I.P.; Kotsyubynsky, A.O.; Kozub, V.V.; Solnstev, V.S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using ...
  • Micropatterning in bistable cholesteric device with Bragg's reflection 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M.; Tishenko, V.G.; Tkach, V.M.; Yelshansky, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential ...
  • Morphology of sulphur-terminated compound deposits condensed on different substrates in vacuum 
    Grytsenko, K.P.; Lytvyn, P.M.; Doroshenko, T.P.; Kolomzarov, Yu.V.; Bricks, J.L.; Kurdyukov, V.V.; Slominskii, Yu.L.; Tolmachev, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Thin films of new sulphur-terminated organic compounds were deposited by evaporation in vacuum onto the glass, silicone, gold and polytetrafluoroethylene substrates. The influence of compound chemical structure and substrate ...
  • Nanoprobe spectroscopy of capillary forces and its application for a real surface diagnostics 
    Efremov, A.A.; Lytvyn, P.M.; Anishchenko, А.O.; Dyachyns’ka, O.M.; Aleksyeyeva, T.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The paper presents an overview and analysis of the most reliable and at the same time rather simple theoretical models describing liquid nanomeniscus geometry and forces occurring between atomic force microscope (AFM) ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters 
    Snopok, B.A.; Kostyukevich, K.V.; Lysenko, S.I.; Lytvyn, P.M.; Lytvyn, O.S.; Mamykin, S.V.; Zynyo, S.A.; Shepelyavyj, P.E.; Kostyukevich, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of the evanescent wave phenomena (e.g. surface plasmon resonance) in the chemical and biochemical sensors provides both optimal conditions for registration of specific interactions and high sensitivity. At the ...
  • Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system 
    Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
  • Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type ...
  • Peculiarities of the PbTe nano-islet formation on BaF₂ substrate at "hot wall" epitaxy method investigated by atomic force microscopy 
    Sheremeta, T.I.; Prokopenko, I.V.; Lytvyn, P.M.; Lytvyn, O.S.; Vodop`yanov, V.M.; Bakhtinov, A.P.; Shyn`ko, E.I. (Functional Materials, 2007)
    Peculiarities of PbTe nano-islet films formation on BaF₂ (111) fresh cleavages by hot wall epitaxy deposition have been investigated using atomic force microscopy. It has been shown that various growth mechanisms could be ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Recrystallization processes in screen-printed CdS films 
    Klad’ko, V.P.; Lytvyn, O.S.; Lytvyn, P.M.; Osipenok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F.; Korchevoy, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the ...
  • Screen-printed p-CdTe layers for CdS/CdTe solar cells 
    Klad'ko, V.P.; Lytvyn, P.M.; Osipyonok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Structural investigations of annealed ZnS:Cu, Ga film phosphors 
    Lytvyn, O.S.; Khomchenko, V.S.; Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Prokopenko, I.V.; Rodionov, V.Ye.; Tzyrkunov, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various ...
  • The growth of weakly coupled graphene sheets from silicon carbide powder 
    Kiselov, V.S.; Lytvyn, P.M.; Nikolenko, A.S.; Strelchuk, V.V.; Stubrov, Yu.Yu.; Tryus, M.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly ...
  • The microrelief studies of stainless steel mirrors sputtered with Ar⁺ ions of different energy 
    Bondarenko, V.N.; Konovalov, V.G.; Solodovchenko, S.I.; Shtan′, A.F.; Ryzhkov, I.V.; Voitsenya, V.S.; Lytvyn, P.M.; Byrka, O.V.; Skorik, O.A. (Вопросы атомной науки и техники, 2018)
    Four stainless steel mirror specimens were sputtered to an identical mean thickness of the eroded layer 2 μm with Ar⁺ ions. Each specimen was exposed to ions with one kinetic energy from the followings: 300, 600, 1000, ...
  • TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment 
    Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Lytvyn, O.S.; Prokopenko, I.V.; Ivanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...