Перегляд Вопросы атомной науки и техники за автором "Gaidar, G.P."

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Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

Gaidar, G.P.; Berdnichenko, S.V.; Vorobyov, V.G.; Kochkin, V.I.; Lastovetskiy, V.F.; Litovchenko, P.G. (Вопросы атомной науки и техники, 2016)

In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals ...
Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

Gaidar, G.P.; Berdnichenko, S.V.; Vorobyov, V.G.; Kochkin, V.I.; Lastovetskiy, V.F.; Litovchenko, P.G. (Вопросы атомной науки и техники, 2017)

On the basis of experimental studies the surface-barrier technology for fabrication of sectional nuclear radiation detectors with using of the high-resistance n-Si plates of large diameter (~ 100 mm) was optimized. The ...
Radiation-induced effects in silicon

Gaidar, G.P.; Pinkovska, M.B.; Starchyk, M.I. (Вопросы атомной науки и техники, 2019)

Results of complex studies of the structural properties of silicon irradiated with light ions of megaelectronvolt energies by fluences greater than 10¹⁶ cm⁻² are presented. It was found that during irradiation under ...

Результати 1-3 з 3

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