Litovchenko, P.G.; Wahl, W.; Groza, A.A.; Dolgolenko, A.P.; Karpenko, A.Ya.; Khivrych, V.I.; Litovchenko, O.P.; Lastovetsky, V.F.; Sugakov1, V.I.; Dubovy, V.K.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
Radiation hardness of semiconductor detectors based on silicon is, first of all, determined by an introduction rate of point defects and aggregation of defect clusters. So introduction of electrically inactive impurity of ...