Berkutov, I.B.; Andrievskii, V.V.; Komnik, Yu.F.; Myronov, M.; Mironov, O.A.
(Физика низких температур, 2008)
The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum
well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude
was used ...