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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1998, № 1 за автором "Nazarov, A.N."

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1998, № 1 за автором "Nazarov, A.N."

Сортувати за: Порядок: Результатів:

  • Lysenko, V.S.; Rudenko, T.E.; Nazarov, A.N.; Kilchitskaya, V.I.; Rudenko, A.N.; Limanov, A.B.; Colinge, J.-P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The characteristics of enhancement-mode MOS transistors fabricated on zone-melting recrystallized (ZMR) silicon-on-insulator (SOI) films were systematically experimentally investigated in the temperature range 25–300°C. ...
  • Boutry-Forveille, A.; Ballutaud, D.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    SIMS measurements and thermal effusion experiments were performed to study the distribution and thermal stability of deuterium in SOI structures fabricated by zone melting recrystallization technique. It was found that the ...

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