Atroshchenko, L.V.; Galkin, S.N.; Galchinetskii, L.P.; Lalayants, A.I.; Rybalka, I.A.; Ryzhikov, V.D.; Silin, V.I.; Starzhinskii, N.G.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown ...