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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Micro-Raman study of CNx composites subjected to high pressure treatment 
    Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Model of optical transitions in A₂B₆ wurtzite type quantum dots 
    Kunets, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone ...
  • On problem of the rigorous diffraction quantitative description 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New data showing an inaccuracy of Kirchhoff's description for the diffraction of the limited aperture light beams are presented. A series of the known experimental facts, which did not have an unequivocal interpretation ...
  • Optical constants of surface layer on gadolinium gallium garnet: ellipsometric study 
    Belyaeva, A.I.; Galuza, A.A.; Grebennik, T.G.; Yuriyev, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A multiple angle ellipsometric method is used for measurements of thin film layers on substrates. The method evaluates fundamental optical constants and thicknesses of the film layers. Dielectric functions of the surface ...
  • Photoelectric peculiarities of electric photographic and holographic recording media with ionic dyes 
    Davidenko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The features of formation and relaxation of metastable connected states of cation-radical of carbazole and negatively charged fragment of dye molecule were investigated in the films of poly-N-epoxypropilcarbazole doped ...
  • Photogeneration of charge carriers in photosensitive organic semiconductors 
    Barabash, Yu.M.; Zabolotny, M.A.; Sokolov, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Thermalization processes in photosensitive organic semiconductors are theoretically considered from the standpoint of their main parameters, namely: thermalization time and thermalization length. These are shown to be ...
  • Pre- and postmelting of cadmium telluride 
    Shcherbak, L.P.; Feichouk, P.I.; Plevachouk, Yu.A.; Kopach, O.V.; Turyanska, L.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal ...
  • Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application 
    Mazur, Yu.I.; Tarasov, G.G.; Kuzmenko, E.V.; Belyaev, A.E.; Hoerstel, W.; Kraak, W.; Masselink, W.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic ...
  • Residual atmosphere in vacuum fluorescent displays 
    Finkelshtein, S.H.; Sorokin, V.M.; Rakitin, S.A.; Sevostyanov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    This paper is devoted to problems of gassing in vacuum fluorescent displays (VFD). Technique of qualitative and quantitative analysis of residual atmosphere in VFDs is presented. Also, dynamics of residual gas pressure ...
  • Saddle point excitonic resonances in BiI3 layered single crystals 
    Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.

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