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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Resistance thermometers based on the germanium films 
    Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature ...
  • Saturation of optical absorption in CdS single crystals 
    Malysh, N. I.; Kunets, V. P.; Valiukh, S. I.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the ...
  • Silicon-on-insulator technology for microelectromechanical applications 
    Usenko, A.Y.; Carr, W.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of ...
  • Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing 
    Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...
  • Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique 
    Serdega, B.K.; Venger, Ye.F.; Nikitenko, Ye.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The ...

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