Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Simple waveguide model of arbitrary filled plane-plane cavity 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some waveguide features responsible for angular structure of a plane-plane cavity output emission, which were not discussed before, are considered. A number of common regularities in mode structure of such cavity at the ...
  • Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing 
    Agueev, O.A.; Svetlichny, A.M.; Soloviev, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General ...
  • Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy 
    Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating 
    Agueev, O.A.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize ...
  • Thermoelectric properties of solid solutions based on tin telluride 
    Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис