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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Optical properties of p-type porous GaAs 
    Kidalov, V.V.; Beji, L.; Sukach, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. ...
  • p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy 
    Sapaev, B.; Saidov, A.S.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the ...
  • Polymorphism in chalcogenides of alkalineearth metals 
    Drozdov, V.А.; Pozhivatenko, V.V.; Drozdov, М.А.; Kovalchuk, V.V.; Moiseev, L.M.; Moiseeva, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model 
    Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential ...
  • The structure of glassy HgS–GeS₂ 
    Halyan, V.V.; Davydyuk, H.Ye.; Parasyuk, O.V.; Kevshyn, A.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The glass HgS(x)-GeS2(₁₀₀-x) (0 ≤ x ≤ 50) was subjected to X-ray analysis. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic ...
  • Unstable mixing regions in II-VI quaternary solid solutions 
    Deibuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...

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