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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System 
    Moskvin, P.P.; Rashkovetsky, L.V.; Khodakovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence ...
  • Information conception of image perception at solid-state lighting 
    Osinsky, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An information-technological approach to the development of integral white light sources is introduced. It is based on the technology of epitaxial growth of nanostructures in multicomponent solid-state solutions of A³B⁵ ...
  • Local properties of impurity and defects investigated by high pressure spectroscopy 
    Grinberg, Marek (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ...
  • Obtaining and optical properties of the glasses of the GeS₂–HgS system 
    Nechyporuk, B.D.; Olekseyuk, I.D.; Yukhymchuk, V.O.; Filonenko, V.V.; Mazurets, I.I.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The glassy alloys of the GeS₂–HgS system in the range of 0–50 mol. % HgS were obtained by the melt quenching technique. Their Raman spectra were investigated. The dependence of the particularities of the light scattering ...
  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
  • On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses 
    Shpotyuk, O.I.; Vakiv, M.M.; Butkiewicz, B.; Kovalskiy, A.P.; Golovchak, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have investigated the influence of high-energy γ-irradiation on the optical transmission spectra of ternary Ge-As-S chalcogenide glasses of the stoichiometric As₂S₃-GeS₂ and non-stoichiometric As₂S₃-Ge₂S₃ systems. A ...
  • Optical investigation of the electronic structure of alloys Сu-Fе 
    Vovchenko, V.V.; Staschuk, V.S.; Poperenko, L.V.; Lysiuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigate the optical properties of Cu-Fe alloys in a wide interval of concentrations (7.5–30 at. %) and in a wide spectral interval (0.25–7 µm). An additional absorption associated with interband electron transitions ...
  • Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation 
    Moscal, D.S.; Fedorenko, L.L.; Yusupov, M.M.; Golodenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a ...
  • Polarized optical transmittance spectra of nonlinear thiogallate crystals near "isotropic point" 
    Kushnir, O.S.; Dzendzelyuk, O.S.; Hrabovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of researches of the polarized optical transmittance spectra of nonlinear thiogallate crystals near the “isotropic point” are represented and discussed
  • Thermofield Cr→Cr²⁺ recharging resulting in anomalous intensification of Cr²⁺ emission in ZnS:Cr thin-film electroluminescent structures 
    Vlasenko, N.A.; Oleksenko, P.F.; Denisova, Z.L.; Mukhlyo, M.A.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    For the first time, an anomalous strong increase of the Cr²⁺ emission intensity (I) with increasing the applied voltage (V) has been discovered in ZnS:Cr thin-film electroluminescent structures (TFELS) instead of the ...

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