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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Simulation of applied principles of envelope functions for Fabry-Perot spectroscopy of plane wave for single-layer structures 
    Kosobutskyy, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The method to obtain analytical expressions for envelope functions in spectra of normal incidence light reflection and transmission by single-layer structures is proposed
  • Template-based growth of TiO₂ nanorods by sol-gel process 
    Sadeghzadeh-Attar, A.; Sasani Ghamsari, M.; Hajiesmaeilbaigi, F.; Mirdamadi, Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the preparation of TiO2 nanorods by sol-gel-template process has been considered. The prepared sols were characterized by using FTIR spectroscopy, and the obtained nanorods were characterized by X-ray ...
  • The current density order based on the Ginzburg-Landau description 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The goal of this survey is to deduce the grandeurs, or the set of grandeurs, from which is derived simultaneously as a linear combination of densities of states, current density matrix and the reduced entropy, according ...
  • The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties 
    Horvat, G.T.; Kondratenko, O.S.; Loja, V.Ju.; Myholynets, I.M.; Rosola, I.J.; Jurkovуch, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure ...
  • The radiation hardness of pulled silicon doped with germanium 
    Dolgolenko, A.P.; Gaidar, G.P.; Varentsov, M.D.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier ...
  • The role of multicomponent surface diffusion in growth and doping of silicon nanowires 
    Efremov, A.; Klimovskaya, A.; Hourlier, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The metal-catalyzed chemical vapor deposition on silicon substrates remains one of the most promising technologies for growing the silicon nanowires up to now. The process involves a wide variety of elementary events ...
  • Using ion beams for creation of nanostructures on the surface of high-stable materials 
    Gorbov, I.V.; Petrov, V.V.; Kryuchyn, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Main ion-beam etching techniques for creation of nanostructures on the surface of high-stable materials have been considered. Methods of information recording in the form of nanostructure on the metallic substrate surface ...

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