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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Dielectric properties of nematic liquid crystals with Fe₃O₄ nanoparticles in direct magnetic field 
    Gornitska, O.P.; Koval’chuk, A.V.; Koval’chuk, T.N.; Kopčanský, P.; Timko, M.; Zavisova, V.; Koneracká, M.; Tomašovičová, N.; Jadzyn, J.; Studenyak, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Researched within the frequency range 10⁻¹–10⁶ Hz were dielectric properties of pure 6CHBT liquid crystals and 6CHBT ones with the impurity of Fe₃O₄ nanoparticles that have the mean diameter 5 nm and weight concentration ...
  • Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices 
    Eladl, Sh.M.; Nasr, A.; Aboshosha, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) ...
  • Effect of the structure of polarimeter characteristic matrix on light polarization measurements 
    Savenkov, S.N.; Oberemok, Ye.A.; Klimov, O.S.; Barchuk, О.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the paper, we carried out the comparative analysis of three polarimeters among the most usable their variants: (i) Stokes polarimeter based on phenomenological definition of Stokes parameters; (ii) Stokes polarimeter ...
  • Electron-electron drag in crystals with multivalley band 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer ...
  • Electron mobility in CdxHg₁₋xSe 
    Malyk, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples ...
  • Energy loss researches of diamond microgrinded laser mirrors by Fourier optics methods 
    Staschuk, V.S.; Kononchuk, G.L.; Poperenko, L.V.; Stukalenko, V.V.; Filipov, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The diffraction losses of laser mirrors were determined by using specially designed spectrometer of spatial frequencies. Reflection surface (70 mm diameter) was made by diamond microgrinding, but instead of an ideal ...
  • Fullerene and fullerene-aluminum nanostructured films as sensitive layers for gas sensors 
    Grynko, D.; Burlachenko, J.; Kukla, O.; Kruglenko, I.; Belyaev, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The responses of quartz crystal microbalance (QCM) sensors coated by fullerene and fullerene-aluminum films to ethanol and water vapors are investigated. The possibility of controlling the adsorption properties of such ...
  • Measurement and analysis of reversible transformations of vortex-free and singular light fields produced by PDLC cells 
    Ponevchinsky, V.V.; Vasil’ev, V.I.; Soskin, M.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work, we have firstly realized and investigated reversible transformations of vortex-free and singular optical complex landscapes appearing in a He-Ne laser beam transmitted through a PDLC cell, which is controlled ...
  • Modeling of photons trapping effect on the performance of HPT-LED Optoelectronic Integrated Device (OEID) 
    Eladl, Sh.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The effect of photons trapped at the LED side due to total internal reflection on the transient behavior of an Optoelectronic Integrated Device (OEID) is considered in this paper. The device is composed of a Heterojunction ...
  • Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment 
    Konakova, R.V.; Kladko, V.P.; Lytvyn, O.S.; Okhrimenko, O.B.; Konoplev, B.G.; Svetlichnyi, A.M.; Lissotschenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure ...
  • Optical and photoluminescent properties of Ag/Al₂O₃ nanocomposite films obtained by pulsed laser deposition 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The method of pulsed laser deposition in vacuum from forward and backward particle flows from an erosion torch was used to prepare silver films and Ag/Al₂O₃ nanocomposite films. Measured were transmission and time-resolved ...
  • Optical and photoluminescent properties of nanostructured hybrid films based on functional fullerenes and metal nanoparticles 
    Dmitruk, N.; Borkovskaya, O.; Naumenko, D.; Berezovska, N.; Dmitruk, I.; Meza-Laguna, V.; Alvarez-Zauco, E.; Basiuk, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The chemically cross-linked C₆₀ thin films, capable of binding Ag or Au nanoparticles, were prepared by the gas-phase treatment with diamine for one set of samples and dithiol for another one and decoration with Ag or ...
  • Optical properties of GaSe semiconducting crystals intercalated by CdTe nanoparticles 
    Khalavk, Y.B.; Shcherbak, L.P.; Pyrlya, M.M.; Boledzyuk, V.B.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The transmission spectra of GaSe crystals intercalated by CdTe nanoparticles (NPs) from aqueous colloidal solutions were investigated at 77 K in the range of GaSe excitonic absorption. Solutions of two types – yellow ...
  • Parameters of the energy spectrum for holes in CuInSe₂ 
    Gorley, P.М.; Prokopenko, I.V.; Galochkinа, О.О.; Horley, P.P.; Vorobiev, Yu.V.; González-Hernández, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    This paper reports the coefficients Ca,b for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We also obtained the tensor components for the carrier ...
  • Peculiarities of neutron irradiation influence on GaP light-emitting structures 
    Litovchenko, P.; Litovchenko, A.; Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) ...
  • Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers 
    Rubish, V.M.; Gera, E.B.; Pop, M.M.; Maryan, V.M.; Kostyukevych, S.O.; Moskalenko, N.L.; Semak, D.G.; Kostyukevych, K.V.; Kryuchin, A.A.; Petrov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads ...
  • Preparation technology and photoluminescence properties of CdTe nanocrystals in colloidal solutions and polymeric matrices 
    Kalytchuk, S.M.; Korbutyak, D.V.; Scherbak, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    An analysis of physical mechanisms responsible for the influence of stabilizer type and ambient material on CdTe nanocrystal growth rate and passivation effectiveness of surface dangling bonds has been carried out. The ...
  • Structure and electrical properties of In₂Se₃Mn layered crystals 
    Kaminskii, V.M.; Kovalyuk, Z.D.; Zaslonkin, A.V.; Ivanov, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 ...
  • Theory of a simple and efficient method for the axial optical vortex beam synthesis from a quasi-plane wave 
    Khoroshun, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The diffraction light field is studied by the numerical calculations of Kirchhoff-Fresnel integral and Fourier analysis. Based on combination of these methods, the condition of an axial optical vortex generation in a ...
  • Thin-film heterostructures based on conducting polymers and organic semiconductors 
    Vertsimakha, Ya.I.; Aksimentyeva, O.I.; Perminov, R.J.; Poliovyi, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We have carried out the experimental verification of a possibility to produce organic heterostructures by using films of organic semiconductors (OS) which are photosensitive in a wide spectral region, absorb light, and ...

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