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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за назвою

Сортувати за: Порядок: Результатів:

  • Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation 
    Burbelo, R.; Isaiev, M.; Kuzmich, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The analysis of photothermal conversion in materials with modified properties of surface layer was made in this work. Influence of both physical and geometrical nonlinearities on the process of heat distribution was estimated.
  • Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers 
    Rubish, V.M.; Gera, E.B.; Pop, M.M.; Maryan, V.M.; Kostyukevych, S.O.; Moskalenko, N.L.; Semak, D.G.; Kostyukevych, K.V.; Kryuchin, A.A.; Petrov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads ...
  • Preparation technology and photoluminescence properties of CdTe nanocrystals in colloidal solutions and polymeric matrices 
    Kalytchuk, S.M.; Korbutyak, D.V.; Scherbak, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    An analysis of physical mechanisms responsible for the influence of stabilizer type and ambient material on CdTe nanocrystal growth rate and passivation effectiveness of surface dangling bonds has been carried out. The ...
  • Properties of junction diodes under conditions of bisotropic strains 
    Borblik, V.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and ...
  • Properties of phase-shifting devices used in researches of nonlinear absorption 
    Kulish, M.R.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    . Formulated in this work are the requirements to the Fresnel rhomb used for light polarization control of high-power lasers. Technical parameters of the rhomb have been given. The calibration procedure of the Fresnel ...
  • Reliability of AC thick-film electroluminescent lamps 
    Vlaskin, V.; Vlaskina, S.; Berezhinsky, L.; Svechnikov, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The reliability of AC thick-film EL devices has been studied. The AC thickfilm EL devices were fabricated by Novatech Inc. using the industrial print screen technology. The analysis of reasons for failure has been proposed. ...
  • Specific thermoemf and Hall-effect in crystals with monopolar conductivity 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The Seebeck coefficient α and Hall constant RH are calculated for monopolar crystal as based of quantum kinetic equation. It is shown that α and RH in the case of simple isotropic band do not depend on relaxation ...
  • Stacking Faults in the single crystals 
    Mihir M. Vora; Aditya M. Vora (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural ...
  • Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures 
    Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.A.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent (EL) impact-excited thin-film waveguide structures is reported. The structures consist of the following thin films deposited on a glass substrate: ...
  • Structure and electrical properties of In₂Se₃Mn layered crystals 
    Kaminskii, V.M.; Kovalyuk, Z.D.; Zaslonkin, A.V.; Ivanov, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 ...
  • Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method 
    Marchylo, O.M.; Zavjalova, L.V.; Nakanishi, Y.; Kominami, H.; Hara, K.; Belyaev, A.E.; Svechnikov, G.S.; Fenenko, L.I.; Poludin, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    New red SrTiO₃:Pr³⁺ phosphor for the field emission displays application was prepared using the sol-gel method. The reaction between starting materials SrCl₂, Ti-(Oi-C₃H₇)₄ and PrCl₃ resulted in a mix of compounds ...
  • Testing the optical methods by using the multi-level holographic grating 
    Barchuk, О.I.; Braginets, Y.V.; Klimov, O.S.; Oberemok, Y.A.; Savenkov, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work the interaction peculiarities of electro-magnetic optical range radiation with gratings’ surfaces are investigated. The multilevel diffractive holographic grating is proposed to be used for the polarization ...
  • The features of surface plasmon resonance in gold cluster films 
    Maksimenko, L.S.; Matyash, I.E.; Rudenko, S.P.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The internal reflection of nanosized gold cluster films was studied using the technique of polarization modulation of electromagnetic radiation in the Kretschmann geometry. We measured the reflection coefficients Rs and ...
  • Theory of a simple and efficient method for the axial optical vortex beam synthesis from a quasi-plane wave 
    Khoroshun, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The diffraction light field is studied by the numerical calculations of Kirchhoff-Fresnel integral and Fourier analysis. Based on combination of these methods, the condition of an axial optical vortex generation in a ...
  • The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors 
    Semchuk, O.Yu.; Gichan, О.І.; Grechko, L.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the ...
  • Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing 
    Prokopiv, V.V.; Fochuk, P.M.; Gorichok, I.V.; Vergak, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe ...
  • Thin-film heterostructures based on conducting polymers and organic semiconductors 
    Vertsimakha, Ya.I.; Aksimentyeva, O.I.; Perminov, R.J.; Poliovyi, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We have carried out the experimental verification of a possibility to produce organic heterostructures by using films of organic semiconductors (OS) which are photosensitive in a wide spectral region, absorb light, and ...
  • Thin silicon solar cells with SiОх /SiNx Bragg mirror rear surface reflector 
    Ivanov, I.I.; Nychyporuk, T.V.; Skryshevsky, V.A.; Lemiti, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    . Bragg reflectors consisting of sequence of dielectric layers with a quarter wavelengths optical thickness are promising to create solar cells of third generation. SiОх /SiNx Bragg mirror (BM) at the backside of textured ...
  • Two-dimensional modeling the static parameters for a submicron field-effect transistor 
    Zaabat, M.; Draid, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor ...
  • Wavelet analysis for Mueller matrix images of biological crystal networks 
    Ushenko, Yu.O.; Tomka, Yu.Ya.; Pridiy, O.G.; Motrich, A.V.; Dubolazov, O.V.; Misevitch, I.Z.; Istratiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Theoretically grounded in this work is the efficiency of using the statistical and fractal analyses for distributions of wavelet coefficients for Mueller-matrix images of biological crystal networks inherent to human ...

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