Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
→
Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за датою випуску

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за датою випуску

Результати 21-40 з 70

Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

Prokopiv, V.V.; Fochuk, P.M.; Gorichok, I.V.; Vergak, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe ...
Two-dimensional modeling the static parameters for a submicron field-effect transistor

Zaabat, M.; Draid, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

A comparison of two different models for simulation of submicron GaAs MESFETs static characteristics has been made. A new two-dimensional numerical model is presented to investigate the submicron field-effect transistor ...
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

Emad Hameed Hussein (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode ...
Electron mobility in CdxHg₁₋xSe

Malyk, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples ...
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system

Bourdoucen, H.; Zitouni, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction ...
Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method

Marchylo, O.M.; Zavjalova, L.V.; Nakanishi, Y.; Kominami, H.; Hara, K.; Belyaev, A.E.; Svechnikov, G.S.; Fenenko, L.I.; Poludin, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

New red SrTiO₃:Pr³⁺ phosphor for the field emission displays application was prepared using the sol-gel method. The reaction between starting materials SrCl₂, Ti-(Oi-C₃H₇)₄ and PrCl₃ resulted in a mix of compounds ...
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ...
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

Borblik, V.L.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes ...
Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface

Mamykin, S.; Dmitruk, N.; Korovin, A.; Naumenko, D.; Dmytruk, A.; Park, Yeon-Su (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Au/SiO₂ core-shell nanoparticles have been used to increase the photocurrent in the surface barrier structure Au/GaAs. The method for theoretical calculation of interaction between light and the system of ordered ...
Peculiarities of neutron irradiation influence on GaP light-emitting structures

Litovchenko, P.; Litovchenko, A.; Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) ...
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

Konakova, R.V.; Kladko, V.P.; Lytvyn, O.S.; Okhrimenko, O.B.; Konoplev, B.G.; Svetlichnyi, A.M.; Lissotschenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure ...
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

Abbasov, Sh.M.; Aghaverdiyeva, G.T.; Ibrahimov, Z.A.; Farajova, U.F.; Ibrahimova, R.A.; Mehdevi, Heyder (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray ...
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures

Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.A.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent (EL) impact-excited thin-film waveguide structures is reported. The structures consist of the following thin films deposited on a glass substrate: ...
Influence of polarization of semiconductor lattice on its optical vibration spectrum

Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Considered in this paper are optical spectra of crystal lattice vibrations in semiconductor solid solutions, which have two vibration bands depending on solution composition. It has been shown that this dependence for ...
Fine structure of NQR spectra in GaSe

Kovalyuk, Z.D.; Lastivka, G.I.; Khandozhko, О.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Peculiarities of the observation of nuclear quadrupole resonance (NQR) in GaSe crystals grown from melt are under investigations. The splitting of a resonance NQR line by two identical spectra is caused by the availability ...
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz

Babych, V.М.; Olikh, Ja.М.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The ...
Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure

Misevitch, I.Z.; Ushenko, Yu.O.; Pridiy, O.G.; Motrich, A.V.; Tomka, Yu.Ya.; Dubolazov, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

In this work, we have theoretically grounded conceptions of singularities observed in coordinate distributions of Mueller matrix elements for a network of human tissue biological crystals. Found is interrelation between ...
Wavelet analysis for Mueller matrix images of biological crystal networks

Ushenko, Yu.O.; Tomka, Yu.Ya.; Pridiy, O.G.; Motrich, A.V.; Dubolazov, O.V.; Misevitch, I.Z.; Istratiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Theoretically grounded in this work is the efficiency of using the statistical and fractal analyses for distributions of wavelet coefficients for Mueller-matrix images of biological crystal networks inherent to human ...
Analysis of properties of optical carriers after long-term storage

Petrov, V.V.; Kryuchyn, A.A.; Gorbov, I.V.; Kossko, I.O.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Performed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical ...
Stacking Faults in the single crystals

Mihir M. Vora; Aditya M. Vora (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural ...

Результати 21-40 з 70

Пошук

Розширений пошук

Перегляд

Вся бібліотека
Розділ

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12 за датою випуску

Пошук

Перегляд

Вся бібліотека

Розділ

Мій обліковий запис