Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si.
Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si
substrate heated up to 330 °С. It is shown that the contact ...