Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor
deposition (MOCVD) method. Deformation conditions in the superlattice ...