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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial ...
  • Characterization of quaternary chalcogenide As-Ge-Te-Si thin films 
    Amer, H.H.; Elkordy, M.; Zien, M.; Dahshan, A.; Elshamy, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin ...
  • Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature 
    Lashkarev, G.V.; Sichkovskyi, V.I.; Radchenko, M.V.; Aleshkevych, P.; Dmitriev, O.I.; Butorin, P.E.; Kovalyuk, Z.D.; Szymczak, R.; Slawska-Waniewska, A.; Nedelko, N.; Yakiela, R.; Balagurov, A.M.; Beskrovnyy, A.I.; Dobrowolsk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second ...
  • Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure 
    Steblenko, L.P.; Koplak, O.V.; Syvorotka, I.I.; Kravchenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed ...
  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the ...
  • Jones-matrix images corresponding to networks of biological crystals for diagnostics and classification of their optical properties 
    Ushenko, Yu. O.; Balanetsk, V. O.; Angelsky, O. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Performed in this work is a complex statistical, correlation and fractal analysis of coordinate distributions for Jones-matrix elements describing birefringent networks observed in the main types of human amino acids. ...
  • Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism 
    Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.O.; Lytvyn, P.M.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. ...
  • Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells 
    Gudenko1, Yu.M.; Vainberg, V.V.; Poroshin, V.M.; Tulupenko, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. ...
  • Method and estimation of parameters of dense part of double electrical layer at the interface electrode-solution of the dye in liquid crystal 
    Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    First estimated were the parameters of dense part of double electrical layer (DEL) at the interface electrode – solution of the dye in liquid crystal, based on analysis of capacitance-voltage characteristics obtained at ...
  • Multi-element gas sensor based on surface plasmon resonance: recognition of alcohols by using calixarene films 
    Kostyukevych, K.V.; Khristosenko, R.V.; Shirshov, Yu.M.; Kostyukevych, S.A.; Samoylov, A.V.; Kalchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    This work is devoted to development of a multi-element gas sensor based on surface plasmon resonance (SPR) to recognize some alcohols. As sensitive layers capable to change their optical properties when interacting with ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical properties of the Ti surface structured by femtosecond laser beam 
    Dolgov, L.; Kravchuk, R.; Rybak, A.; Kiisk, V.; Sildos, I.; Blonskyi, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Wavelength-scaled periodic ripples formed on the Ti surface under the action of femtosecond laser irradiation have been investigated. The ripples were oriented in parallel to the incident light polarization. After initial ...
  • Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals 
    Taghiyev, T.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Sensors for fire gas detectors 
    Kozubovsky, V.R.; Kormosh, V.V.; Alyakshev, I.P.; Lishchenko, N.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper are the possibilities to reduce energy consumption in semiconductor gas sensors with the purpose of their application in multichannel fire gas detectors and gas alarms with an independent power supply.
  • Size effects in p-PbTe nanostructures on polyamide 
    Freik, D.M.; Yurchyshyn, I.K.; Potyak, V.Yu.; Lysiuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences ...
  • The new approach to identification of film reflecting holographic marks 
    Kostyukevych, S.O.; Muravsky, L.I.; Fitio, V.M.; Voronyak, T.I.; Shepeliavyi, P.E.; Kostyukevych, K.V.; Moskalenko, N.L.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master ...
  • The role of copper in bifacial CdTe based solar cells 
    Khrypunov, G.; Meriuts, A.; Shelest, T.; Deineko, N.; Klyui, N.; Avksentyeva, L.; Gorbulik, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present an innovative back contact for CdTe solar cell by the application of a transparent conducting oxide, typically ITO, as a back electrical contact on CdTe/CdS photovoltaic devices that acts as a free-Cu stable ...

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