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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals 
    Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Optical properties of the Ti surface structured by femtosecond laser beam 
    Dolgov, L.; Kravchuk, R.; Rybak, A.; Kiisk, V.; Sildos, I.; Blonskyi, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Wavelength-scaled periodic ripples formed on the Ti surface under the action of femtosecond laser irradiation have been investigated. The ripples were oriented in parallel to the incident light polarization. After initial ...
  • Photoconductivity and photoluminescence features of γ-irradiated GaS₀.₇₅Se₀.₂₅‹Er› single crystals 
    Taghiyev, T.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Sensors for fire gas detectors 
    Kozubovsky, V.R.; Kormosh, V.V.; Alyakshev, I.P.; Lishchenko, N.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper are the possibilities to reduce energy consumption in semiconductor gas sensors with the purpose of their application in multichannel fire gas detectors and gas alarms with an independent power supply.
  • Size effects in p-PbTe nanostructures on polyamide 
    Freik, D.M.; Yurchyshyn, I.K.; Potyak, V.Yu.; Lysiuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences ...
  • The new approach to identification of film reflecting holographic marks 
    Kostyukevych, S.O.; Muravsky, L.I.; Fitio, V.M.; Voronyak, T.I.; Shepeliavyi, P.E.; Kostyukevych, K.V.; Moskalenko, N.L.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master ...
  • The role of copper in bifacial CdTe based solar cells 
    Khrypunov, G.; Meriuts, A.; Shelest, T.; Deineko, N.; Klyui, N.; Avksentyeva, L.; Gorbulik, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present an innovative back contact for CdTe solar cell by the application of a transparent conducting oxide, typically ITO, as a back electrical contact on CdTe/CdS photovoltaic devices that acts as a free-Cu stable ...

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