Kopyshinsky, A.V.; Zelensky, S.E.; Gomon, E.A.; Rozouvan, S.G.; Kolesnik, A.S.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
Laser-induced incandescence (LII) of silicon surface is investigated under the
excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the
increase of LII signal is observed, which is attended ...