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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Taqi, A.; Diouri, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Using the variational method in real space and the effective-mass theory, we present quite an advanced semi-analytic approach susceptible for calculating the binding energy Eb of Wannier excitons in semiconductor quantum ...
  • Kiselov, V.S.; Yukhymchyk, V.A.; Poludin, V.I.; Tryus, M.P.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron ...
  • Olenych, І.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the ...
  • Ivanisik, А.І.; Isaenko, O.Iu.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    It’s theoretically proved that in self-focusing mode of exciting radiation, selfphase modulation, and the relaxation oscillations of the nonlinear polarization amplitude, the frequency-angular structure of the parametric ...
  • Lozovski, V.; Lysenko, V.; Piatnytsia, V.; Spivak, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    A new mechanism of interaction between two nanoparticles characterized by their dimensions and shape has been proposed. The mechanism is based on the local-field induced dipole momentum interaction with taking into account ...
  • Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...
  • Kopyshinsky, A.V.; Zelensky, S.E.; Gomon, E.A.; Rozouvan, S.G.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended ...
  • Kiselov, V.S.; Borisov, Yu.S.; Tryus, M.; Vitusevich, S.A; Pud, S.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Mechanical properties: The Vickers hardness and bending strength of porous biomorphic SiC (bioSiC) ceramics fabricated from different natural hardwoods were investigated. It has been found that these parameters are highly ...
  • Lytvyn, P.M.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Grytsenko, K.P.; Schrader, S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper presents a study on modeling the mechanical interaction between the tip of a scanning atomic force microscope (AFM) and surfaces of various types, which makes it possible to optimize parameters and modes for ...
  • Kryuchyn, A.A.; Lapchuk, A.S.; Bryts’kyi, A.I.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Analyzed in this work are the requirements to an optical system for laser thermolithographic recording. It has been shown that possibilities of this type recording with decreasing the registered element sizes can be ...
  • Tetyorkin, V.V.; Sukach, A.V.; Stariy, S.V.; Boiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films ...
  • Dan’ko, V.A.; Indutnyi, I.Z.; Myn’ko, V.I.; Shepeliavyi, P.E.; Lukyanyuk, M.V.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral ...
  • Makhniy, V.P.; Slyotov, М.М.; Tkachenko, I.V.; Slyotov, А.М. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.
  • Kavetskyy, T.S.; Tsmots, V.M.; Stepanov, A.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction ...
  • Bortchagovsky, E.G.; Lozovski, V.Z.; Mishakova, T.O.; Hingerl, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We have investigated optical properties of films of gold nanoparticles on Si/SiO₂ substrate by using the method of spectroscopic ellipsometry in dependence on morphology of the films. Different morphology of the films ...
  • Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical ...
  • Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...

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