Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4 за назвою

Результати 15-17 з 17

Spectral-ellipsometric examining the films of gold nanoparticles on Si/SiO₂ substrate

Bortchagovsky, E.G.; Lozovski, V.Z.; Mishakova, T.O.; Hingerl, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

We have investigated optical properties of films of gold nanoparticles on Si/SiO₂ substrate by using the method of spectroscopic ellipsometry in dependence on morphology of the films. Different morphology of the films ...
Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon

Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

. Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical ...
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals

Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...

Результати 15-17 з 17

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