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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S 
    Borschak, V.A.; Brytavskyi, Ie.V.; Smyntyna, V.A.; Lepikh, Ya.I.; Balaban, A.P.; Zatovskaya, N.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that ...
  • Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of ...
  • Interaction between viral particles and structured metal surface under surface plasmon propagation 
    Lozovski, V.; Lysenko, V.; Spivak, M.; Sterligov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new method for decontamination of biological liquids (blood or blood plasma, for instance) from viruses is proposed. The method is based on the efficient attraction between nanoparticles and nanostructured surface, ...
  • Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films 
    Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe 
    Kovalyuk, Z.D.; Duplavyy, V.Y.; Sydor, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of ...
  • Narrow-gap piezoelectric heterostructure as IR detector 
    Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband 
    Felinskyi, S.G.; Korotkov, P.A.; Felinskyi, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Physical conditions for occurrence of the spectral bands with the negative dielectric permittivity in nonmagnetic crystalline media in the terahertz waveband have been studied in this work. It has been shown that damping ...
  • Peculiarities of valence band formation in As-Ge-Se semiconductor glasses 
    Vakiv, M.; Golovchak, R.; Chalyy, D.; Shpotyuk, M.; Ubizskii, S.; Shpotyuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that ...
  • Phase diagrams of Si₁-xGex solid solution: a theoretical approach 
    Jivani, A.R.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where ...
  • Ultrafast light-matter interaction in transparent medium 
    Korovin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The ultrafast interaction between high power laser light and plasma has been studied theoretically. The theoretical simulations are based on the nonlinear Schrödinger equation taking into account group velocity dispersion, ...

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