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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за назвою

Сортувати за: Порядок: Результатів:

  • Laser-induced incandescence of silicon surface under 1064-nm excitation 
    Kopyshinsky, A.V.; Zelensky, S.E.; Gomon, E.A.; Rozouvan, S.G.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended ...
  • Mechanical properties of biomorphous ceramics 
    Kiselov, V.S.; Borisov, Yu.S.; Tryus, M.; Vitusevich, S.A; Pud, S.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Mechanical properties: The Vickers hardness and bending strength of porous biomorphic SiC (bioSiC) ceramics fabricated from different natural hardwoods were investigated. It has been found that these parameters are highly ...
  • Mechanical scanning probe nanolithography: modeling and application 
    Lytvyn, P.M.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Grytsenko, K.P.; Schrader, S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper presents a study on modeling the mechanical interaction between the tip of a scanning atomic force microscope (AFM) and surfaces of various types, which makes it possible to optimize parameters and modes for ...
  • Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals 
    Paiuk, A.P.; Stronski, A.V.; Vuichyk, N.V.; Gubanova, A.A.; Krys’kov, Ts.A.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Room temperature IR impurity absorption spectra in 1 4000 7000 cm ( 4.1 - 25um ) region for chalcogenide glasses of As₂S₃ doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects ...
  • Narrow-gap piezoelectric heterostructure as IR detector 
    Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband 
    Felinskyi, S.G.; Korotkov, P.A.; Felinskyi, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Physical conditions for occurrence of the spectral bands with the negative dielectric permittivity in nonmagnetic crystalline media in the terahertz waveband have been studied in this work. It has been shown that damping ...
  • Optical absorption edge in (Ag₃AsS₃)x(As₂S₃)₁-x superionic glasses 
    Studenyak, I.P.; Kranjcec, M.; Neimet, Yu.Yu.; Pop, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The spectrometric studies of optical absorption edge in (Ag₃AsS₃)x(As₂S₃)₁-x superionic glasses were carried out within the temperature range 77 to 400 K. The influence of temperature and composition on the optical ...
  • Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity 
    Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. ...
  • Peculiarities of valence band formation in As-Ge-Se semiconductor glasses 
    Vakiv, M.; Golovchak, R.; Chalyy, D.; Shpotyuk, M.; Ubizskii, S.; Shpotyuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that ...
  • Perspectives for using technology of laser thermolithography 
    Kryuchyn, A.A.; Lapchuk, A.S.; Bryts’kyi, A.I.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Analyzed in this work are the requirements to an optical system for laser thermolithographic recording. It has been shown that possibilities of this type recording with decreasing the registered element sizes can be ...
  • Phase diagrams of Si₁-xGex solid solution: a theoretical approach 
    Jivani, A.R.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we have used the pseudo-alloy atom model and higher-order perturbation theory based on pseudopotential approach to investigate phase diagram at different temperatures for Si₁–xGex solid solution system where ...
  • Photoelectrical properties of nanoporous silicon 
    Luchenko, A.I.; Svezhentsova, K.V.; Melnichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties ...
  • Photoelectric properties of In₂O₃-InSe heterostructure with nanostructured oxide 
    Katerynchuk, V.M.; Kudrynskyi, Z.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The photosensitive In₂O₃-p-InSe heterostructures, in which the In₂O₃ frontal layer has a nanostructured surface, have been investigated. The photoresponse spectra of these heterostructures have been found as essentially ...
  • Photoluminescence studies of CdTe polycrystalline films 
    Tetyorkin, V.V.; Sukach, A.V.; Stariy, S.V.; Boiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films ...
  • Photostimulated etching of germanium chalcogenide films 
    Dan’ko, V.A.; Indutnyi, I.Z.; Myn’ko, V.I.; Shepeliavyi, P.E.; Lukyanyuk, M.V.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral ...
  • Polarization correlometry of nets for characteristic states in Mueller-matrix patterns inherent to phase-inhomogeneous biological layers 
    Novakovs’ka, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Considered in this paper are the capabilities of the singular approach to the analysis of Stokes-parametric and Mueller-matrix patterns inherent to polycrystalline networks observed in phase-inhomogeneous biological ...
  • Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates 
    Makhniy, V.P.; Slyotov, М.М.; Tkachenko, I.V.; Slyotov, А.М. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Using the isovalent substitution method, CdSe heterolayers of cubic modification were obtained for the first time on single-crystal CdTe substrates, and their basic physical properties were studied.
  • Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements 
    Kavetskyy, T.S.; Tsmots, V.M.; Stepanov, A.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction ...
  • Reflection coefficient and optical conductivity of gallium nitride GaN 
    Akinlami, J.O.; Olateju, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, ...
  • Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction 
    Smirnov, A. B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the ...

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