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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за назвою

Сортувати за: Порядок: Результатів:

  • Influence of cation substitution on electrical conductivity and optical absorption edge in Cu₇(Ge1–xSix)S₅I mixed crystals 
    Studenyak, I.P.; Kranjčec, M.; Bilanchuk, V.V.; Dziaugys, A.; Banys, J.; Orliukas, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Electrical conductivity of Cu₇(Ge₁₋xSix)S₅I mixed crystals was measured in the frequency range 1.0x10⁶ –1.2x10⁹ Hz and in the temperature interval 100–300 K. The frequency and temperature behaviour of the electrical ...
  • Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu₂S 
    Borschak, V.A.; Brytavskyi, Ie.V.; Smyntyna, V.A.; Lepikh, Ya.I.; Balaban, A.P.; Zatovskaya, N.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The signal (defined by conductivity) of optical sensor based on CdS-Cu₂S heterostructure both at direct and alternative current strongly depends on barrier parameters that can change under exposure. It was stated that ...
  • Influence of the dispersion environment nature on photoluminescence properties of CdTe nanocrystals in colloidal solutions 
    Kapush, O.A.; Kalytchuk, S.M.; Trishchuk, L.I.; Tomashyk, V.M.; Tomashyk, Z.F.; Kravtsova, A.S.; Korbutyak, D.V.; Boruk, S.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The physico-chemical properties of low-dimensional structures based on CdTe obtained in the course of colloidal synthesis have been investigated. Analyzed have been the main photoluminescence characteristics of CdTe ...
  • Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of ...
  • Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range 
    Makhanets, O.M.; Tsiupak, N.R.; Voitsekhivska, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The theory of exciton spectrum and intensities of interband quantum transitions in multi-shell hexagonal semiconductor nanotube is developed within the effective masses and rectangular potentials approximations using Bethe ...
  • Interaction between two nonpoint nanoparticles: Implementation to biology and medicine 
    Lozovski, V.; Lysenko, V.; Piatnytsia, V.; Spivak, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    A new mechanism of interaction between two nanoparticles characterized by their dimensions and shape has been proposed. The mechanism is based on the local-field induced dipole momentum interaction with taking into account ...
  • Interaction between viral particles and structured metal surface under surface plasmon propagation 
    Lozovski, V.; Lysenko, V.; Spivak, M.; Sterligov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new method for decontamination of biological liquids (blood or blood plasma, for instance) from viruses is proposed. The method is based on the efficient attraction between nanoparticles and nanostructured surface, ...
  • Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films 
    Bacherikov, Yu.Yu.; Boltovets, N.S.; Konakova, R.V.; Kolyadina, E.Yu.; Ledn’ova, T.M.; Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this work, we studied comparative characteristics of the SiO₂/SiC heterostructures. The following two techniques were used for SiO₂ formation: thermal oxidation in water vapor (i) and oxidation in solution (ii). ...
  • Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe 
    Kovalyuk, Z.D.; Duplavyy, V.Y.; Sydor, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of ...
  • Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...
  • IR region challenges: Photon or thermal detectors? Outlook and means 
    Sizov, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Infrared (IR) detectors play now an increasing role in different areas of human activity (e.g., security and military applications, tracking and targeting, environmental surveillance, fire and harvest control, communications, ...
  • Laser-induced incandescence of silicon surface under 1064-nm excitation 
    Kopyshinsky, A.V.; Zelensky, S.E.; Gomon, E.A.; Rozouvan, S.G.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended ...
  • Mechanical properties of biomorphous ceramics 
    Kiselov, V.S.; Borisov, Yu.S.; Tryus, M.; Vitusevich, S.A; Pud, S.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Mechanical properties: The Vickers hardness and bending strength of porous biomorphic SiC (bioSiC) ceramics fabricated from different natural hardwoods were investigated. It has been found that these parameters are highly ...
  • Mechanical scanning probe nanolithography: modeling and application 
    Lytvyn, P.M.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Grytsenko, K.P.; Schrader, S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper presents a study on modeling the mechanical interaction between the tip of a scanning atomic force microscope (AFM) and surfaces of various types, which makes it possible to optimize parameters and modes for ...
  • Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals 
    Paiuk, A.P.; Stronski, A.V.; Vuichyk, N.V.; Gubanova, A.A.; Krys’kov, Ts.A.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Room temperature IR impurity absorption spectra in 1 4000 7000 cm ( 4.1 - 25um ) region for chalcogenide glasses of As₂S₃ doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects ...
  • Narrow-gap piezoelectric heterostructure as IR detector 
    Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband 
    Felinskyi, S.G.; Korotkov, P.A.; Felinskyi, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Physical conditions for occurrence of the spectral bands with the negative dielectric permittivity in nonmagnetic crystalline media in the terahertz waveband have been studied in this work. It has been shown that damping ...
  • Optical absorption edge in (Ag₃AsS₃)x(As₂S₃)₁-x superionic glasses 
    Studenyak, I.P.; Kranjcec, M.; Neimet, Yu.Yu.; Pop, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The spectrometric studies of optical absorption edge in (Ag₃AsS₃)x(As₂S₃)₁-x superionic glasses were carried out within the temperature range 77 to 400 K. The influence of temperature and composition on the optical ...
  • Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity 
    Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. ...
  • Peculiarities of valence band formation in As-Ge-Se semiconductor glasses 
    Vakiv, M.; Golovchak, R.; Chalyy, D.; Shpotyuk, M.; Ubizskii, S.; Shpotyuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Peculiarities of valence bands formation in As-Ge-Se semiconductor glasses have been investigated within AsxGexSe₁₋₂x cut of glass forming region by highresolution X-ray photoelectron spectroscopy (XPS). It is shown that ...

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