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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Malenko, A.S.; Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Performed in this work is the analysis of the optical Ronchi interferometer circuit and its upgrading to test quality of various optical surfaces. Briefly described in this paper is the classic test by Ronchi, shown is ...
  • Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias ...
  • Doroshkevich, A.S.; Shylo, A.V.; Volkova, G.K.; Glazunova, V.A.; Perekrestova, L.D.; Lyubchik, S.B.; Konstantinova, T.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Using the methods of transmission electron microscopy, X-ray structure analysis and thermal differential analysis, it has been discovered that the pulsed magnetic field (PMF) intensifies homogeneous crystallization in ...
  • Bacherikov, Yu.Yu.; Okhrimenko, O.B.; Zhuk, A.G.; Kurichka, R.V.; Gilchuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and ...
  • Kardashev, D.L.; Kardashev, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Local vibrational density of states for disordered graphene has been calculated via Green’s functions method. Disordered material has been modeled with Bethe lattice. Density of states does not include particularities ...
  • Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Kovalchuk, O.V.; Kovalchuk, T.M.; Kucheriavchenkova, N.M.; Sydorchuk, V.V.; Khalameida, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Multiferroics stable in morphological parameters has been created by introducing ferromagnetic (Fe₂O₃) and ferroelectric (LiNbO₃) nanoparticles with the concentration 0.3 wt.% into nematic liquid crystal 6СНВТ. Being based ...
  • Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Kuryptya, Ya.A.; Savchenko, B.M.; Kovalchuk, O.V.; Kovalchuk, T.M.; Shostak, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By using the oscilloscope method within the frequency range 10 to 10⁶ Hz at the temperature 492.1 K and pressure 11.31 MPa at the output of the single-screw extruder, the dielectric properties of the composite melt – linear ...
  • Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
  • Rusinchuk, N.M.; Lozovski, V.Z.; Shydlovska, O.A.; Zholobak, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possible method for evaluation of virus, bacteria and yeasts infectivity based on study of their absorption spectra has been proposed. The decrease in the samples infectivity was caused by adding the CeO₂ nanoparticles. ...
  • Studenyak, I.P.; Kutsyk, M.M.; Studenyak, V.I.; Bendak, A.V.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM ...
  • Kostiukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    With the purpose to improve such service characteristics of transducers on the basis of the surface plasmon resonance (SPR) as the sensitivity and stability, we have analyzed the influences of a structure and a relief of ...

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