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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за назвою

Сортувати за: Порядок: Результатів:

  • Local vibrational density of states in disordered graphene 
    Kardashev, D.L.; Kardashev, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Local vibrational density of states for disordered graphene has been calculated via Green’s functions method. Disordered material has been modeled with Bethe lattice. Density of states does not include particularities ...
  • Long-term radiation-induced optical darkening effects in chalcogenide glasses 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical ...
  • Low doses effect in GaP light-emitting diodes 
    Hontaruk, O.M.; Konoreva, O.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Radkevych, O.I.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of ...
  • Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) 
    Parphenyuk, P.V.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and ...
  • Luminescent converter of solar light into electrical energy. Review 
    Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Microanalysis of magnetic structure of yttrium-iron garnet films by using the scanning probe microscopy methods 
    Synhaivska, O.I.; Lytvyn, P.M.; Yaremiy, I.P.; Kotsyubynsky, A.O.; Kozub, V.V.; Solnstev, V.S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using ...
  • Multiferroic based on nematic liquid crystal and nanoparticles 
    Kovalchuk, O.V.; Kovalchuk, T.M.; Kucheriavchenkova, N.M.; Sydorchuk, V.V.; Khalameida, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Multiferroics stable in morphological parameters has been created by introducing ferromagnetic (Fe₂O₃) and ferroelectric (LiNbO₃) nanoparticles with the concentration 0.3 wt.% into nematic liquid crystal 6СНВТ. Being based ...
  • Nanocrystalline silicon carbide films for solar cells 
    Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • New method for estimating the refractive index of optical materials in spectrally selective elements 
    Manko, A.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A numerical simulation of the scattering indicatrix in optical spectral-selective cylindrical form elements has been performed. As it follows from the results of the calculations, the shape of the scattering indicatrix of ...
  • Optical properties of graphene film growing on a thin copper layer 
    Rozouvan, T.S.; Poperenko, L.V.; Kravets, V.G.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Optical properties and surface structure of graphene films grown on thin 1-μm copper layer using the chemical vapor deposition method were investigated applying spectroscopic ellipsometry and nanoscopic measurements. ...
  • Optical spectra of small CdS nanocrystals 
    Boichuk, V.I.; Leshko, R.Ya.; Holskyi, V.B.; Karpyn, D.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Determined in this work is the energy of surface states related with polarization charges at the interfaces. This energy was compared with that of electron internal states. Dipole momentum matrix elements of the interlevel ...
  • Optical studies of as-deposited and annealed Cu₇GeS₅I thin films 
    Studenyak, I.P.; Bendak, A.V.; Rybak, S.O.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the ...
  • Optimization of surface plasmon resonance based biosensor for clinical diagnosis of the Epstein–Barr herpes virus disease 
    Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of the sensitive element fabrication technology and noise performance of surface plasmon resonance (SPR) immunosensor on sensitivity and stability of operation inherent to the “Plasmon” series instrument has ...
  • Peculiarities of near-electrode relaxation processes in the polyethylene melt filled with graphite and carbon black 
    Kuryptya, Ya.A.; Savchenko, B.M.; Kovalchuk, O.V.; Kovalchuk, T.M.; Shostak, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By using the oscilloscope method within the frequency range 10 to 10⁶ Hz at the temperature 492.1 K and pressure 11.31 MPa at the output of the single-screw extruder, the dielectric properties of the composite melt – linear ...
  • Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics ...
  • Performance limits of terahertz zero biased rectifying detectors for direct detection 
    Golenkov, A.G.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in ...
  • Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments 
    Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
  • Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation 
    Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown ...
  • Polyvinylcarbazole films: Applications for chemical sensors 
    Kruglenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The adsorption properties of polyvinylcarbazole (PVC) films as sensitive layers of quartz crystal microbalance (QCM) sensors have been studied. Different organic vapors and complex mixture (a cologne) were tested as analytes. ...
  • Possible mechanism of inhibition of virus infectivity with nanoparticles 
    Khylko, O.L.; Rusinchuk, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possible mechanism of inhibition of virus infectivity with nanoparticles has been considered both theoretically and experimentally. It has been supposed that inhibition is caused by action of the nanoparticles on ...

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