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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за назвою

Сортувати за: Порядок: Результатів:

  • Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on ...
  • Doroshkevich, A.S.; Shylo, A.V.; Volkova, G.K.; Glazunova, V.A.; Perekrestova, L.D.; Lyubchik, S.B.; Konstantinova, T.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Using the methods of transmission electron microscopy, X-ray structure analysis and thermal differential analysis, it has been discovered that the pulsed magnetic field (PMF) intensifies homogeneous crystallization in ...
  • Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The temperature dependence of the vibrational modes in the diphosphides ZnP₂ and CdP₂ has been studied by employing IR reflectance spectroscopy within the 4…300 K temperature range in the polarized radiation. It has been ...
  • Sologub, S.V.; Bordenyuk, I.V.; Kanash, O.V.; Amirov, R.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Reported in this paper are the results of investigations aimed at scattering of conduction electrons at the tungsten (110) surface covered with hydrogen submonolayers, in which the effect of increasing the specularity of ...
  • Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that ...
  • Bacherikov, Yu.Yu.; Okhrimenko, O.B.; Zhuk, A.G.; Kurichka, R.V.; Gilchuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and ...
  • Makhniy, V.P.; Vakhnyak, N.D.; Kinzerska, O.V.; Senko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor ...
  • Osinsky, V.I.; Masol, I.V.; Feldman, I.Kh.; Diagilev, A.V.; Sukhovii, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has ...
  • Kardashev, D.L.; Kardashev, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Local vibrational density of states for disordered graphene has been calculated via Green’s functions method. Disordered material has been modeled with Bethe lattice. Density of states does not include particularities ...
  • Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical ...
  • Hontaruk, O.M.; Konoreva, O.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Radkevych, O.I.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of ...
  • Parphenyuk, P.V.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and ...
  • Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Synhaivska, O.I.; Lytvyn, P.M.; Yaremiy, I.P.; Kotsyubynsky, A.O.; Kozub, V.V.; Solnstev, V.S.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, the features of the microstructure of magnetic domains observed in ferrite-garnet films (FGF) have been presented. The studied FGF with orientation (111) were grown on gallium-gadolinium substrate by using ...
  • Kovalchuk, O.V.; Kovalchuk, T.M.; Kucheriavchenkova, N.M.; Sydorchuk, V.V.; Khalameida, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Multiferroics stable in morphological parameters has been created by introducing ferromagnetic (Fe₂O₃) and ferroelectric (LiNbO₃) nanoparticles with the concentration 0.3 wt.% into nematic liquid crystal 6СНВТ. Being based ...
  • Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Manko, A.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A numerical simulation of the scattering indicatrix in optical spectral-selective cylindrical form elements has been performed. As it follows from the results of the calculations, the shape of the scattering indicatrix of ...
  • Rozouvan, T.S.; Poperenko, L.V.; Kravets, V.G.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Optical properties and surface structure of graphene films grown on thin 1-μm copper layer using the chemical vapor deposition method were investigated applying spectroscopic ellipsometry and nanoscopic measurements. ...
  • Boichuk, V.I.; Leshko, R.Ya.; Holskyi, V.B.; Karpyn, D.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Determined in this work is the energy of surface states related with polarization charges at the interfaces. This energy was compared with that of electron internal states. Dipole momentum matrix elements of the interlevel ...
  • Studenyak, I.P.; Bendak, A.V.; Rybak, S.O.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the ...

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