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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за датою випуску

Сортувати за: Порядок: Результатів:

  • Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, it is reported that the γ-irradiated (2.41 MGy accumulated dose) glasses As₂S₃ (∼2 mm thick) and Ge₁₅.₈As₂₁S₆₃.₂ (∼1 mm thick), both measured ∼10 years after γ-irradiation, exhibit radiation-induced optical ...
  • Kovalchuk, O.V.; Kopčansky, P.; Timko, M.; Studenyak, I.P.; Kovalchuk, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Within the frequency range 10⁻¹…10⁶ Hz at the temperature 293 K, the effect of gold nanoparticles on the dielectric properties of the planar-oriented nematic liquid crystal 6СНВТ has been studied. The concentration of ...
  • Kruglenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The adsorption properties of polyvinylcarbazole (PVC) films as sensitive layers of quartz crystal microbalance (QCM) sensors have been studied. Different organic vapors and complex mixture (a cologne) were tested as analytes. ...
  • Parphenyuk, P.V.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and ...
  • Bratus, O.L.; Evtukh, A.A.; Steblova, O.V.; Prokopchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the ...
  • Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown ...
  • Fitio, V.M.; Romakh, V.V.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The article describes a numerical method based on Fourier transform for studying propagating optical waves in dielectric planar waveguides. The inverse problem to the known direct one in waveguide investigation is proposed, ...
  • Doroshkevich, A.S.; Shylo, A.V.; Volkova, G.K.; Glazunova, V.A.; Perekrestova, L.D.; Lyubchik, S.B.; Konstantinova, T.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Using the methods of transmission electron microscopy, X-ray structure analysis and thermal differential analysis, it has been discovered that the pulsed magnetic field (PMF) intensifies homogeneous crystallization in ...
  • Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias ...
  • Kardashev, D.L.; Kardashev, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Local vibrational density of states for disordered graphene has been calculated via Green’s functions method. Disordered material has been modeled with Bethe lattice. Density of states does not include particularities ...
  • Zubrilin, N.G.; Pavlov, I.A.; Baschenko, S.M.; Tkachenko, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The technique for precise measurements of wavelengths in the range around 222 nm (45030 cm⁻¹) has been presented. The reciprocal linear dispersion of the spectrometer was 0.529 Å/mm. The measurements were made in the second ...
  • Studenyak, I.P.; Bendak, A.V.; Rybak, S.O.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the ...
  • Pavelets, S.Yu.; Bobrenko, Yu.N.; Semikina, T.V.; Sheremetova, G.I.; Atdaiev, В.S.; Krulikovska, K.B.; Mazin, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal ...
  • Paiuk, O.P.; Revutska, L.O.; Stronski, A.V.; Gudymenko, A.Yo.; Stanchu, H.V.; Gubanova, A.A.; Kryskov, Ts.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper presents the results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The ...
  • Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a ...
  • Osinsky, V.I.; Masol, I.V.; Feldman, I.Kh.; Diagilev, A.V.; Sukhovii, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has ...
  • Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Kostiukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    With the purpose to improve such service characteristics of transducers on the basis of the surface plasmon resonance (SPR) as the sensitivity and stability, we have analyzed the influences of a structure and a relief of ...

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