Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
http://dspace.nbuv.gov.ua:80/handle/123456789/114600
2024-03-29T14:07:27ZZn and Mn impurity effect on electron and luminescent properties of porous silicon
http://dspace.nbuv.gov.ua:80/handle/123456789/121864
Zn and Mn impurity effect on electron and luminescent properties of porous silicon
Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F.
Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of nanoelements in the above structures is substituted by a silicate one. Measurements of temperature dependencies
(100...300 K) describing the capacitance photovoltage behavior caused by intense pulses (∼10²¹ quanta/cm2s) of red or white light enabled us to determine the following values and their changes: the boundary potential for n-Si, distribution of the concentration inherent to boundary electron states in the n-Si forbidden gap, concentration of traps for non-equilibrium holes at the interface por-Si/n-Si and in the por-Si layer. The substitution of the oxide film by the silicate one, the thickness of which can exceed the
initial thickness of the oxide film, makes these structures more stable and results in sizable changes of spectral dependencies of the short-time (t < 250 ns) and integrated
(t > 250 ns) photoluminescence relaxation components as well as shifts the latter into the shortwave range.
2005-01-01T00:00:00ZOptical properties of p-type porous GaAs
http://dspace.nbuv.gov.ua:80/handle/123456789/121575
Optical properties of p-type porous GaAs
Kidalov, V.V.; Beji, L.; Sukach, G.A.
Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main optical phonons was observed in the Raman spectra of the porous GaAs. Estimation of the size of nanocryslallites in porous GaAs both by Raman shift and scanning electron microscopy gives approximately the same values and was about 10-20 nm. Photoluminescence investigations of porous GaAs exhibit the presence of two infrared and one visible bands.
2005-01-01T00:00:00ZNew technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
http://dspace.nbuv.gov.ua:80/handle/123456789/121574
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.
A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates.
2005-01-01T00:00:00ZPolymorphism in chalcogenides of alkalineearth metals
http://dspace.nbuv.gov.ua:80/handle/123456789/121573
Polymorphism in chalcogenides of alkalineearth metals
Drozdov, V.А.; Pozhivatenko, V.V.; Drozdov, М.А.; Kovalchuk, V.V.; Moiseev, L.M.; Moiseeva, V.O.
Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was the constructive amendments of the potential by means of the electronic density received in a self-coordinated calculation using the approximation of the local density.
2005-01-01T00:00:00Z