Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
http://dspace.nbuv.gov.ua:80/handle/123456789/114580
2024-03-28T08:55:43ZAuthor Index 2009
http://dspace.nbuv.gov.ua:80/handle/123456789/119245
Author Index 2009
2009-01-01T00:00:00ZApproaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
http://dspace.nbuv.gov.ua:80/handle/123456789/118849
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
Emad Hameed Hussein
The relationship between response speed of a silicon n-well/p substrate
photodiode and the depletion layer width has been investigated. Variation of both the
junction capacitance and the series resistance of the photodiode with the depletion layer
width have been analyzed. It is shown that the contribution of the time constant and the
drift time in the rise time within the depletion layer can be decreased to an optimal value
(less than 1ns) just for specific value of the depletion layer width and smaller value of the
diffused junction area.
2009-01-01T00:00:00ZStacking Faults in the single crystals
http://dspace.nbuv.gov.ua:80/handle/123456789/118848
Stacking Faults in the single crystals
Mihir M. Vora; Aditya M. Vora
The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz.
MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct
vapour transport technique (DVT) in the laboratory. Structural characterization of these
crystals was made using the XRD method. The particle size for a number of reflections
has been calculated using the Scherrer formula. There are considerable variations
appearing in deformation (α) and growth (β) fault probabilities in InxMoSe₂ (0 ≤ x ≤ 1)
and Re-doped MoSe₂ single crystals due to their off-stoichiometry, which possesses the
stacking fault in the single crystal.
2009-01-01T00:00:00ZTwo-dimensional modeling the static parameters for a submicron field-effect transistor
http://dspace.nbuv.gov.ua:80/handle/123456789/118847
Two-dimensional modeling the static parameters for a submicron field-effect transistor
Zaabat, M.; Draid, M.
A comparison of two different models for simulation of submicron GaAs
MESFETs static characteristics has been made. A new two-dimensional numerical model
is presented to investigate the submicron field-effect transistor characteristics, the
influence of the geometry of the component, like the inter-electrode distance, on the
capacities. All simulation revealed the existence of a high contact electric field near the
gate, which creates a depopulated zone around the gate, but the preceding studies have
neglected the edge effects, which are very significant for the submicron MESFETs.
2009-01-01T00:00:00Z