Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 2
http://dspace.nbuv.gov.ua:80/handle/123456789/114578
2019-10-22T01:28:17ZMatrix model of inhomogeneous medium with circular birefringence in single scattering case
http://dspace.nbuv.gov.ua:80/handle/123456789/118696
Matrix model of inhomogeneous medium with circular birefringence in single scattering case
Savenkov, S.N.; Oberemok, Ye.A.; Yakubchak, V.V.; Barchuk, О.I.
The paper is devoted to the analysis of light scattering by inhomogeneous
circular birefringent media in a single scattering case. The object under investigation is a
circular birefringent crystalline slab with surface inhomogeneity. For the analysis, we
derive the Mueller matrix model for this media and use Cloude’s coherency matrix
method. Sample calculations are given for quartz SiO₂ and paratellurite TeO₂ .
2009-01-01T00:00:00ZDetermination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters
http://dspace.nbuv.gov.ua:80/handle/123456789/118695
Determination of refractive index dispersion and thickness of thin antireflection films TiO₂ and Si₃N₄ on surfaces of silicon photoelectric converters
Donets, V.V.; Melnichenko, L.Y.; Shaykevich, I.A.; Lomakina, O.V.
Offered in this work is the method to determine the thickness and refractive
index dispersion of thin antireflection films on absorbing substrates by using a spectral
dependence of reflectivity at normal light incidence. The method has been applied to
determine the above characteristics of thin antireflection films TiO₂ and Si₃N₄ on
surfaces of silicon photoelectric converters. The films were prepared by chemical
sedimentation. The obtained experimental data have been treated using a computer
program to deduce dispersion curves and thickness values. The results have been
interpreted.
2009-01-01T00:00:00ZData acquisition, parameter extraction and characterization of active components using integrated instrumentation system
http://dspace.nbuv.gov.ua:80/handle/123456789/118694
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
Bourdoucen, H.; Zitouni, A.
A data acquisition, parameter extraction and characterization system for
electronic active components is presented in this paper. High sensitivity measuring
equipments were used for data acquisition and effective extraction models based on
optimization techniques developed to obtain the parameters of p-n junction diodes,
Schottky diodes, field effect transistors and bipolar junction transistors. The performance
of the developed extraction techniques are apparent via comparing experimental data
with Spice simulated data using the model parameter that is graphically extracted and
also those extracted using optimization techniques. The performance of the developed
extraction techniques has been demonstrated by comparing the experimental
characteristics with Spice simulated curves using default parameters and model
parameters extracted using graphical and optimization techniques. The relative
excursions of the simulated I-V characteristics of most investigated devices were less
than 2.5 % with respect to the experimental curves, which shows the accuracy and
effectiveness of the developed system. A number of software routines have also been
implemented under Matlab environment to extract the Spice model parameters for
different electronic devices.
2009-01-01T00:00:00ZHydrogenic impurity in a bilayer spherical quantum dot
http://dspace.nbuv.gov.ua:80/handle/123456789/118693
Hydrogenic impurity in a bilayer spherical quantum dot
Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya.
In the work, on the basis of the exact solution of the Poisson equation for a
bilayer quantum dot with a positively charged donor ion in its centre, determined is the
potential energy of interaction of this impurity ion with electron, taking into account
different known values of Si and SiO₂ dielectric permittivities. Using the found potential
energy, the Schrödinger equation for the hydrogenic impurity in this system is solved
exactly. The influence of external and internal radii on the electron spectrum is
investigated. Described is the dependence of a squared matrix element for the dipole
moment of interlevel transitions on the external and internal radii of the
nanoheterosystem
2009-01-01T00:00:00Z