Перегляд за автором "Vasilyev, G.P."

Сортувати за: Порядок: Результатів:

  • Deiev, O.S.; Kiprich, S.K.; Vasilyev, G.P.; Yalovenko, V.I.; Ovchinnik, V.D.; Shulika, M.Y. (Вопросы атомной науки и техники, 2017)
    An experimental method of determining the active region thickness of Si planar detector was used. The method based on the dependence the depletion layer thickness from voltage applied to the detector (U = 0...60 V ). The ...
  • Deiev, O.S.; Maslov, N.I.; Ovchinnik, V.D.; Potin, S.M.; Shulika, M.Y.; Vasilyev, G.P.; Voloshyn, V.K.; Yalovenko, V.I. (Вопросы атомной науки и техники, 2013)
    The method of measurement and automated test probe station for the study of the temperature dependence of the leakage current and energy resolution of single-channel planar silicon detectors (PSD) was created. Energy ...