Перегляд за автором "Vakulenko, O.V."

Сортувати за: Порядок: Результатів:

  • Calculation of the metal reflectivity with taking polarization into consideration 
    Vakulenko, O.V.; Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical properties of free electrons in the conduction band of metal are considered. It is shown that the conventional Drude theory does not take shielding of the external electrical field by mobile electrons into account. ...
  • Evidence for photochemical transformations in porous silicon 
    Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...
  • Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions 
    Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM ...
  • Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate 
    Lysiuk, V.O.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻². Analyses of the systems by AFM and SEM have shown that the ...
  • IR luminescence of ZnSe-based scintillators 
    Vakulenko, O.V.; Kravchenko, V.M. (Functional Materials, 2004)
    The work is aimed at the nature elucidation of IR photoluminescence (PL) bands with peaks at 1.3 and 1.6 eV (970 and 790 nm, respectively) in ZnSe and ZnSe(Te) crystals. Experimental studies of the PL of additionally ...
  • Photoresponse in Ge/Si nanostructures with quantum dots 
    Nikolenko, A.S.; Kondratenko, S.V.; Vakulenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed ...
  • Photovoltage and photocurrent spectroscopy of luminescent porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Measurements of photoconductivity, photovoltage and photoluminescence spectra of porous silicon/c-Si structures are carried out. It is shown that the shape of the photoconductivity and photovoltage spectra is caused mainly ...
  • Post-anodic formation of luminescent porous silicon layers in atmospheric environment 
    Makara, V.A.; Vakulenko, O.V.; Shevchenko, V.B.; Dacenko, O.I. (Functional Materials, 2005)
    The changes occuring in HF pre-etched porous silicon (PS) samples during aging are studied by measurement of photoluminescence (PL) and IR transmission spectra. The PL behavior of the etched sample is found to depend on ...
  • Quantum effects in multilayer Si-Ge nanoheterostructures 
    Kozyrev, Yu.N.; Rubezhanska, M.Yu.; Sushyі, A.V.; Kondratenko, S.V.; Vakulenko, O.V.; Dadykin, A.A.; Naumovets, A.G. (Поверхность, 2008)
    The lateral photoconductivity spectra and photofield electron emission were used to investigate multilayer Ge/Si heterostructures with Ge quantum dots. Earlier we have revealed a close connection between elastic strain in ...
  • Spectral dependence of the photomagnetic effect in porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • The influence of non-uniform deformation on photoelectric properties of crystalline silicon 
    Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the ...
  • Varistor-like current-voltage characteristic of porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Shutov, B.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms ...