Перегляд за автором "Tagiyev, T.B."

Сортувати за: Порядок: Результатів:

  • Pashayev, A.M.; Gadjiyev, A.R.; Tagiyev, T.B.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. ...
  • Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
  • Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the ...
  • Madatov, R.S.; Tagiyev, T.B.; Khaligzadeh, A.Sh. (Вопросы атомной науки и техники, 2021)
    The infuence of γ-radiation with a dose Dγ = 140 krad on the photoluminescence of Yb-doped GaS single crystals was investigated. Based on the analysis of the experimental results, it is concluded that the doping of the ...
  • Abbasov, Sh.M.; Nuruyev, I.R.; Tagiyev, T.B.; Agaverdiyeva, G.T.; Kerimova, T.I.; Ismayilova, G.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the effect of electron irradiation on photoelectrical and optical properties of Pb₁₋xMnxTe (0.01 ≤ x ≤ 0.05) epitaxial films containing 0.5…1 at. % of gallium with thicknesses of 1…5 µm, obtained by the ...