Перегляд за автором "Sadanov, E.V."

Сортувати за: Порядок: Результатів:

  • Analytical model for intergrain expansion and cleavage: random grain boundaries 
    Mazilova, T.I.; Sadanov, E.V.; Dudka, O.V.; Ksenofontov, V.A.; Starchenko, I.V.; Velicodnaya, O.A. (Вопросы атомной науки и техники, 2014)
    A description of rigid-body grain boundary relaxation and cleavage in tungsten is performed using a pair-wise Morse interatomic potential in real and reciprocal spaces. Cleavage energies and grain boundary dilatation of ...
  • Atomic density at high-angle grain boundaries in tungsten 
    Ksenofontov, V.A.; Mazilov, A.A.; Mazilova, T.I.; Sadanov, E.V.; Sokolenko, V.I.; Voyevodin, V.N.; Dudka, O.V.; Mikhailovskij, I.M. (Вопросы атомной науки и техники, 2011)
    The oscillatory features of the atomic relaxation and the phenomenon of plane coalescence on high-angle grain boundaries in tungsten are studied by the methods of molecular statics and field ion microscopy. A nonmonotonic ...
  • Determination of the energy of solution of a helium atom at grain boundaries of general type 
    Mazilova, T.I.; Sadanov, E.V.; Voyevodin, V.N.; Dudka, O.V.; Mazilov, A.A.; Mikhailovskij, I.M. (Вопросы атомной науки и техники, 2013)
    The relation between the potential energy of grain boundaries of general type and the value of dilatation of grain boundaries was determined by method of mathematical modeling in reciprocal space in tungsten. It is shown, ...
  • Features of helium complexes behaviour near the free surface in tungsten 
    Starchenko, I.V.; Sadanov, E.V. (Вопросы атомной науки и техники, 2019)
    The formation of interstitial atoms by lattice tungsten atoms displacement by clusters of implanted helium, which is accompanied with the appearance of helium-vacancy complexes, was found. The stimulating effect of the ...
  • High-field forming of tungsten surface by evaporation in liquid nitrogen 
    Sadanov, E.V.; Mazilov, A.A.; Gordienko, J.A.; Mazilova, T.I.; Mikhailovskij, I.M. (Вопросы атомной науки и техники, 2022)
    The basic obstacle to the application of the method of low-temperature field evaporation is the necessity of the creation of superhigh electric fields on the surface of the processing object. There are problems connected ...