Перегляд за автором "Ostrovskii, I.P."

Сортувати за: Порядок: Результатів:

  • Druzhinin, A.A.; Ostrovskii, I.P.; Khoverko, Yu.N.; Liakh-Kaguy, N.S.; Vuytsyk, A.M. (Functional Materials, 2014)
    Magnetophonone oscillations of magnetoresistance in heavily doped n-Ge whiskers with impurity concentration that corresponds to metal-insulator transition were studied in the temperatures range 4.2-70 K in continuous and ...
  • Druzhinin, A.A.; Ostrovskii, I.P.; Kogut, Yu.R.; Warchulska, J.K. (Functional Materials, 2007)
    The magnetoresistance and magnetic susceptibility (MS) of Si—Ge<B> whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two ...
  • Druzhinin, A.A.; Dolgolenko, A.P.; Ostrovskii, I.P.; Khoverko, Yu.N.; Nichkalo, S.I.; Kogut, Iu.R. (Functional Materials, 2014)
    The paper presents an analysis of impact of charge carriers transport mechanisms on the thermoelectric properties of Si-Ge submicron whiskers. Based on the resistance temperature dependences the value of activation energy ...
  • Druzhinin, A.A.; Ostrovskii, I.P.; Khoverko, Yu.M.; Gij, Ya.V. (Functional Materials, 2005)
    Growth peculiarities of doped Si₁₋ₓGeₓ (х = 0.01-0.05) solid solution whiskers of 1 to 100 µm in diameter in closed bromide system by chemical transport reactions method have been investigated. А dimensional dependence ...