Перегляд за автором "Oberemok, A.S."

Сортувати за: Порядок: Результатів:

  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • Investigations of impurity gettering in multicrystalline silicon 
    Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...