Перегляд за автором "Machulin, V.F."

Сортувати за: Порядок: Результатів:

  • Anisotropy of ultrasonic waves propagation velocities in CdHgTe/CdTe 
    Lysiuk, I.O.; Machulin, V.F.; Olikh, Ya.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The complete set of elastic moduli of Cd₀.₂Hg₀.₈Te was obtained. Taking into account elastic moduli found for Cd₀.₂Hg₀.₈Te and appropriate literary data for CdTe the anisotropy of velocities of volume and Rayleigh waves ...
  • Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon 
    Datsenko, L.I.; Klad’ko, V.P.; Lytvyn, P.M.; Domagala, J.; Machulin, V.F.; Prokopenko, I.V.; Molodkin, V.B.; Maksimenko, Z.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...
  • Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals 
    Machulin, V.F.; Motsnyi, F.V.; Peresh, E.Yu.; Smolanka, O.M.; Svechnikov, G.S. (Физика низких температур, 2004)
    The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals 2.857 eV (T = 4.2 K) and the ...
  • Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals 
    Klad'ko, V. P.; Grigoriev, D.O.; Datsenko, L.I.; Machulin, V.F.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the ...
  • Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors 
    Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
  • Investigation of superlattice structure parameters using quasi-forbidden reflections 
    Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
  • Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals 
    Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
  • Optical and acoustical phonon modes in superlattices with SiGe QDs 
    Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Photochromic properties of composite films of thermally irreversible diarylethenes and fulgimides in polytetrafluoroethylene matrix 
    Kobeleva, O.I.; Valova, T.M.; Ait, A.O.; Barachevsky, V.A.; Grytsenko, K.P.; Machulin, V.F.; Krayushkin, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Photochromic polymeric thin films have been prepared by vacuum codeposition of polytetrafluoroethylene (PTFE) and thermally irreversible photochromic compounds: the cyclopentene derivative of diarylethene and fulgimide. ...
  • Properties and application of ultrasonic Lamb waves in CdxHg₁₋xTe plates 
    Lysiuk, I.O.; Machulin, V.F.; Olikh, Ja.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Group and phase velocities of the lowest orders of Lamb waves in <100>, <110> directions for (100) Cd₀.₂Hg₀.₈Te plates are calculated. Frequency dispersion of a₀ and s₀ Lamb modes velocities were measured on (111)-plates ...
  • Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing 
    Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...
  • Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon 
    Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...
  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...