Перегляд за автором "Gomonnai, A.V."

Сортувати за: Порядок: Результатів:

  • Azhniuk, Yu.M.; Gomonnai, A.V.; Gomonnai, O.O.; Hasynets, S.M.; Kováč, F.; Lopushansky, V.V.; Petryshynets, I.; Rubish, V.M.; Zahn, D.R.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, ...
  • Rosul, R.R.; Guranich, P.P.; Gomonnai, O.O.; Slivka, A.G.; Rigan, M.Yu.; Rubish, V.M.; Guranich, O.G.; Gomonnai, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Studies of polycrystalline TlIn(S₁-xSex)₂ samples under hydrostatic pressure were performed. Determined in this work were pressure coefficients near temperatures of ε(T) anomalies. Based on studying the temperature ...
  • Drobnich, A.V.; Molnar, A.A.; Gomonnai, A.V.; Vysochanskii, Yu.M.; Prits, I.P. (Condensed Matter Physics, 2003)
    Size effect on the fundamental properties of Sn₂P₂S₆ ferroelectric is studied. The decrease of Raman peak frequency, accompanied by the band broadening and asymmetry, is observed in the spectra of microcrystalline Sn₂P₂S₆ ...