Перегляд за автором "Gaidar, G.P."

Результати 1-15 з 15

Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Features of changes in the electrophysical parameters (concentrations of charge carriers ne and their mobilities μ ) in heavily doped n-Ge <As> single crystals, which occur as a result of the series of thermoannealings ...
Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)

Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial ...
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
Features of piezoresistance in heavily doped n-silicon crystals

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not ...
Features of tensoresistance in single crystals of germanium and silicon with different dopants

Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of ρX /ρ₀ = f(X) function, which depend on ...
Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Dolgolenko, A.P.; Litovchenko, P.G.; Litovchenko, A.P.; Varentsov, M.D.; Lastovetsky, V.F.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

Silicon n-type samples with resistivity ~2.5*10³ Ohm*cm grown by the method of a floating-zone in vacuum (FZ), in argon tmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and ...
Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

Gaidar, G.P.; Berdnichenko, S.V.; Vorobyov, V.G.; Kochkin, V.I.; Lastovetskiy, V.F.; Litovchenko, P.G. (Вопросы атомной науки и техники, 2016)

In this paper the features of influence of the surface electron processes on the formation of silicon surface-barrier detector structures were founded, the regimes of chemical treatments of the surface for Si crystals ...
Influence of γ-irradiation (⁶⁰Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

The influence of γ-irradiation (⁶⁰Co) (within the dose range 1×10⁶ ≤ D ≤ 8×10⁷ R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of ...
Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)

The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), ...
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ...
Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

Gaidar, G.P.; Berdnichenko, S.V.; Vorobyov, V.G.; Kochkin, V.I.; Lastovetskiy, V.F.; Litovchenko, P.G. (Вопросы атомной науки и техники, 2017)

On the basis of experimental studies the surface-barrier technology for fabrication of sectional nuclear radiation detectors with using of the high-resistance n-Si plates of large diameter (~ 100 mm) was optimized. The ...
Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

Baranskii, P.I.; Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

. Investigated in this work were changes in the concentration of charge carriers ne and their mobilities u, which occur under the influence of thermoannealing of n - Si and n - Ge crystals grown by the Czochralski method. ...
Radiation-induced effects in silicon

Gaidar, G.P.; Pinkovska, M.B.; Starchyk, M.I. (Вопросы атомной науки и техники, 2019)

Results of complex studies of the structural properties of silicon irradiated with light ions of megaelectronvolt energies by fluences greater than 10¹⁶ cm⁻² are presented. It was found that during irradiation under ...
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Gaidar, G.P.; Dolgolenko, A.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)

The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with ...
The radiation hardness of pulled silicon doped with germanium

Dolgolenko, A.P.; Gaidar, G.P.; Varentsov, M.D.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier ...

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Перегляд за автором "Gaidar, G.P."

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